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IEEE transactions on electron devices

IEEE transactions on electron devices
紙記録メディア雑誌
Institute of Electrical and Electronics Engineers<Z53-F2>
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Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs

Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs
デジタル文書・図像類
Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo KoideInstitute of Electrical and Electronics Engineers (IEEE)2024-01-30IEEE Transactions on Electron Devices71 3p.1764-1768
インターネットで読める全国の図書館
  • 掲載誌（ISSN）00189383

High-Performance N79 Band AlScN BAW Resonator and Filter With the Consideration of Area Effect

High-Performance N79 Band AlScN BAW Resonator and Filter With the Consideration of Area Effect
デジタル記事
2023-11IEEE Transactions on Electron Devices70 11p.5839-5844
全国の図書館
  • 掲載誌（ISSN）00189383

Grating Optimization for Smith–Purcell Radiation: Direct Correlation Between Spatial Growth Rate and Starting Current

Grating Optimization for Smith–Purcell Radiation: Direct Correlation Between Spatial Growth Rate and Starting Current
デジタル記事
2023-06IEEE Transactions on Electron Devices70 6p.2860-2863
全国の図書館
  • 掲載誌（ISSN）00189383

Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al<sub>2</sub>O<sub>3</sub> Deposition

Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al<sub>2</sub>O<sub>3</sub> Deposition
デジタル記事
2023-05IEEE Transactions on Electron Devices70 5p.2199-2203
全国の図書館
  • 掲載誌（ISSN）00189383

Ab Initio Computational Screening and Performance Assessment of van der Waals and Semimetallic Contacts to Monolayer WSe<sub>2</sub>P-Type Field-Effect Transistors

Ab Initio Computational Screening and Performance Assessment of van der Waals and Semimetallic Contacts to Monolayer WSe<sub>2</sub>P-Type Field-Effect Transistors
デジタル記事
2023-04IEEE Transactions on Electron Devices70 4p.2090-2097
全国の図書館
  • 掲載誌（ISSN）00189383

Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate

Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate
デジタル記事
2023-04IEEE Transactions on Electron Devices70 4p.2153-2156
全国の図書館
  • 掲載誌（ISSN）00189383

Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>3</sub>S<sub>2</sub>

Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>3</sub>S<sub>2</sub>
デジタル記事
2023-04IEEE Transactions on Electron Devices70 4p.2106-2112
全国の図書館
  • 掲載誌（ISSN）00189383

Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition

Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition
デジタル記事
2023-03-16IEEE TRANSACTIONS ON ELECTRON DEVICES70 5p.2199-2203
インターネットで読める全国の図書館
  • 掲載誌（ISSN）00189383

A CMOS Lock-In Pixel Image Sensor With Multisimultaneous Gate for Time-Resolved Near-Infrared Spectroscopy

A CMOS Lock-In Pixel Image Sensor With Multisimultaneous Gate for Time-Resolved Near-Infrared Spectroscopy
デジタル記事
2023-03IEEE Transactions on Electron Devices70 3p.1102-1108
インターネットで読める全国の図書館
  • 掲載誌（ISSN）00189383

An Accurate Model for InP HEMT Small-Signal Equivalent Circuit Based on EM Simulation

An Accurate Model for InP HEMT Small-Signal Equivalent Circuit Based on EM Simulation
デジタル記事
2023-03IEEE Transactions on Electron Devices70 3p.934-940
全国の図書館
  • 掲載誌（ISSN）00189383

Effect of Temperature on Analog Memristor in Neuromorphic Computing

Effect of Temperature on Analog Memristor in Neuromorphic Computing
デジタル記事
2022-11IEEE Transactions on Electron Devices69 11p.6102-6105
全国の図書館
  • 掲載誌（ISSN）00189383

Efficient, 0.35-THz Overmoded Oscillator Based on a Two-Dimensional Periodic Surface Lattice

Efficient, 0.35-THz Overmoded Oscillator Based on a Two-Dimensional Periodic Surface Lattice
デジタル記事
2022-11IEEE Transactions on Electron Devices69 11p.6342-6347
全国の図書館
  • 掲載誌（ISSN）00189383

Read Optimization Enables Ultralow Resistance Drift for Phase Change Memory

Read Optimization Enables Ultralow Resistance Drift for Phase Change Memory
デジタル記事
2022-10IEEE Transactions on Electron Devices69 10p.5536-5541
全国の図書館
  • 掲載誌（ISSN）00189383

Parasitic oscillation analysis of trench IGBT during short-circuit type II using TCAD-based signal flow graph model

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デジタル記事
Kono, Hiroshi, 大村, 一郎IEEE2022-09-14IEEE Transactions on Electron Devices69 10p.5705-5712
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Parasitic oscillation analysis of trench IGBT during short-circuit type II using TCAD-based signal flow graph model

Parasitic oscillation analysis of trench IGBT during short-circuit type II using TCAD-based signal flow graph model
デジタル記事
2022-09-14IEEE Transactions on Electron Devices69 10p.5705-5712
全国の図書館
  • 掲載誌（ISSN）00189383 15579646

Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications

Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications
デジタル記事
2022-08IEEE Transactions on Electron Devices69 8p.4194-4199
全国の図書館
  • 掲載誌（ISSN）00189383

A Study on the Impact of Dislocation Density on Leakage Current in Vertical GaN-on-GaN p-n Diodes

A Study on the Impact of Dislocation Density on Leakage Current in Vertical GaN-on-GaN p-n Diodes
デジタル記事
2022-08IEEE Transactions on Electron Devices69 8p.4206-4211
全国の図書館
  • 掲載誌（ISSN）00189383

Complementary-Switchable Dual-Mode SHF Scandium Aluminum Nitride BAW Resonator

Complementary-Switchable Dual-Mode SHF Scandium Aluminum Nitride BAW Resonator
デジタル記事
2022-08IEEE Transactions on Electron Devices69 8p.4624-4631
全国の図書館
  • 掲載誌（ISSN）00189383

Enhanced Electrical Performance and Low Frequency Noise of In<sub>2</sub>O<sub>3</sub> Thin-Film Transistors Using Al<sub>2</sub>O<sub>3</sub>/CeGdO<sub> <i>x</i> </sub> Bilayer Gate Dielectrics

Enhanced Electrical Performance and Low Frequency Noise of In<sub>2</sub>O<sub>3</sub> Thin-Film Transistors Using Al<sub>2</sub>O<sub>3</sub>/CeGdO<sub> <i>x</i> </sub> Bilayer Gate Dielectrics
デジタル記事
2022-06IEEE Transactions on Electron Devices69 6p.3169-3174
全国の図書館
  • 掲載誌（ISSN）00189383